FDS89141 Generic image

FDS89141

Part No
FDS89141
Manufacturer
onsemi
Description
Transistor MOSFET Array Dual N-CH 100V 3.5A 8-Pin SOIC T/R
Datasheet
FDS89141
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.5 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 62 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Dual
    Fall Time 2.2 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 398 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 31 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 1.6 W
    Rds On Max 62 mΩ
    Resistance 62 MΩ
    Rise Time 1.4 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 3.1 V
    Turn-Off Delay Time 9.8 ns
    Turn-On Delay Time 5 ns
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 187 mg
    Height 1.75 mm
    Length 4 mm
    Width 5 mm
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