FDT3612 Generic image

FDT3612

Part No
FDT3612
Manufacturer
onsemi
Description
ON SEMICONDUCTOR - FDT3612 - MOSFET Transistor, N Channel, 3.7 A, 100 V, 0.12 ohm, 10 V, 2.5 V
Datasheet
FDT3612
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.7 A
    Current Rating 3.7 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 120 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 4.5 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 632 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.1 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Nominal Vgs 2.5 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 1.1 W
    Rds On Max 120 mΩ
    Resistance 120 MΩ
    Rise Time 2 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2.5 V
    Turn-Off Delay Time 23 ns
    Turn-On Delay Time 8.5 ns
    Voltage Rating (DC) 100 V
    Case/Package SOT-223
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 4
    Weight 250.2 mg
    Height 1.8 mm
    Length 6.5 mm
    Width 3.56 mm
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