FDT439N Generic image

FDT439N

Part No
FDT439N
Manufacturer
onsemi
Description
N-Channel Enhancement Mode Field Effect Transistor 30V, 2.5V Specified, 6.3A, 45mΩ
Datasheet
FDT439N
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6.3 A
    Current Rating 6.3 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 45 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Dual Supply Voltage 30 V
    Element Configuration Single
    Fall Time 10 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 500 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 3 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 670 mV
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 1.1 W
    Rds On Max 45 mΩ
    Resistance 45 mΩ
    Rise Time 10 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 670 mV
    Turn-Off Delay Time 30 ns
    Turn-On Delay Time 6 ns
    Voltage Rating (DC) 30 V
    Case/Package SOT-223
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 4
    Number of Terminals 4
    Weight 250.2 mg
    Height 1.8 mm
    Length 6.5 mm
    Width 3.56 mm
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