FDS8958B Generic image

FDS8958B

Part No
FDS8958B
Manufacturer
onsemi
Description
Dual N & P-Channel 30 V 26 mO Surface Mount PowerTrench Mosfet - SOIC-8
Datasheet
FDS8958B
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6.4 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 26 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Fall Time 6 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 540 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 2 W
    Rds On Max 26 mΩ
    Resistance 26 MΩ
    Rise Time 6 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2 V
    Turn-Off Delay Time 17 ns
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 187 mg
    Height 1.75 mm
    Length 4.9 mm
    Width 3.9 mm
    added to cart View cart