FDS86540 Generic image

FDS86540

Part No
FDS86540
Manufacturer
onsemi
Description
MOSFET, N-CH, 60V, 8SOIC; Transistor Polarity: N Channel; Continuous Drain Curren
Datasheet
FDS86540
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 18 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 4.5 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 7.1 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 6.41 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 5 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.5 W
    Rds On Max 4.5 mΩ
    Rise Time 15 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 3.1 V
    Turn-Off Delay Time 33 ns
    Turn-On Delay Time 28 ns
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 130 mg
    Height 1.75 mm
    Length 4.9 mm
    Width 3.9 mm
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