FDS8672S Generic image

FDS8672S

Part No
FDS8672S
Manufacturer
onsemi
Description
The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize
Datasheet
FDS8672S
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 18 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 4.8 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 4 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.67 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 2.1 V
    Number of Elements 1
    Power Dissipation 1 W
    Rds On Max 4.8 mΩ
    Resistance 4.8 MΩ
    Rise Time 4 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2.1 V
    Turn-Off Delay Time 26 ns
    Turn-On Delay Time 12 ns
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 130 mg
    Height 1.5 mm
    Length 5 mm
    Width 4 mm
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