FFB2222A Generic image

FFB2222A

Part No
FFB2222A
Manufacturer
onsemi
Description
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon
Datasheet
FFB2222A
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 75 V
    Collector Emitter Breakdown Voltage 40 V
    Collector Emitter Saturation Voltage 1 V
    Collector Emitter Voltage (VCEO) 40 V
    Current Rating 500 mA
    Element Configuration Dual
    Emitter Base Voltage (VEBO) 5 V
    Frequency 300 MHz
    Gain Bandwidth Product 300 MHz
    hFE Min 75
    Max Breakdown Voltage 40 V
    Max Collector Current 500 mA
    Max Frequency 300 MHz
    Max Operating Temperature 150 °C
    Max Power Dissipation 300 mW
    Min Operating Temperature -55 °C
    Number of Elements 2
    Polarity NPN
    Power Dissipation 300 mW
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Transition Frequency 300 MHz
    Voltage Rating (DC) 40 V
    Case/Package SC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 28 mg
    Height 1 mm
    Length 2 mm
    Width 1.25 mm
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