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FGA60N65SMD
- Part No
- FGA60N65SMD
- Manufacturer
- onsemi
- Description
- In a Tube of 30, ON Semiconductor FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN
- Datasheet
- FGA60N65SMD
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 650 V |
| Collector Emitter Saturation Voltage | 1.9 V |
| Collector Emitter Voltage (VCEO) | 650 V |
| Continuous Collector Current | 120 A |
| Element Configuration | Single |
| Fall Time | 68 ns |
| Max Collector Current | 120 A |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 600 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 600 W |
| Reverse Recovery Time | 47 ns |
| Rise Time | 70 ns |
| Turn-Off Delay Time | 104 ns |
| Turn-On Delay Time | 18 ns |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 6.401 g |
| Height | 23.8 mm |
| Length | 15.8 mm |
| Width | 5 mm |
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