FDS8949 Generic image

FDS8949

Part No
FDS8949
Manufacturer
onsemi
Description
ON SEMICONDUCTOR - FDS8949 - DUAL N CHANNEL MOSFET, 40V, SOIC, FULL REEL
Datasheet
FDS8949
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6 A
    Current Rating 6 A
    Drain to Source Breakdown Voltage 40 V
    Drain to Source Resistance 43 mΩ
    Drain to Source Voltage (Vdss) 40 V
    Dual Supply Voltage 40 V
    Element Configuration Dual
    Fall Time 3 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 955 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 40 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.9 V
    Number of Elements 2
    Packaging Cut Tape
    Power Dissipation 2 W
    Rds On Max 29 mΩ
    Resistance 29 mΩ
    Rise Time 5 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 1.9 V
    Turn-Off Delay Time 23 ns
    Turn-On Delay Time 9 ns
    Voltage Rating (DC) 40 V
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 187 mg
    Height 1.5 mm
    Length 5 mm
    Width 4 mm
    added to cart View cart