Generic image
FGA6560WDF
- Part No
- FGA6560WDF
- Manufacturer
- onsemi
- Description
- Trans IGBT Chip N=-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail
- Datasheet
- FGA6560WDF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 650 V |
| Collector Emitter Saturation Voltage | 2.3 V |
| Collector Emitter Voltage (VCEO) | 650 V |
| Max Collector Current | 120 A |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 306 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Reverse Recovery Time | 110 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Mount | Through Hole |
| Number of Terminals | 3 |
| Weight | 6.401 g |
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