FDS9958 Generic image

FDS9958

Part No
FDS9958
Manufacturer
onsemi
Description
Transistor MOSFET Array Dual P-CH 60V 2.9A 8-Pin SOIC T/R
Datasheet
FDS9958
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.9 mA
    Drain to Source Breakdown Voltage -60 V
    Drain to Source Resistance 105 mΩ
    Drain to Source Voltage (Vdss) -60 V
    Element Configuration Dual
    Fall Time 6 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.02 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 2 W
    Rds On Max 105 mΩ
    Resistance 105 MΩ
    Rise Time 3 ns
    Schedule B 8541290080
    Threshold Voltage -1.6 V
    Turn-Off Delay Time 27 ns
    Turn-On Delay Time 6 ns
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 187 mg
    Height 1.75 mm
    Length 4.9 mm
    Width 3.9 mm
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