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FDT1600N10ALZ
- Part No
- FDT1600N10ALZ
- Manufacturer
- onsemi
- Description
- N-Channel PowerTrench® MOSFET 100V, 5.6A, 160mΩ
- Datasheet
- FDT1600N10ALZ
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 5.6 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 160 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 14.8 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 225 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 10.42 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 10.42 W |
| Rds On Max | 160 mΩ |
| Rise Time | 15 ns |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 13.5 ns |
| Turn-On Delay Time | 7.4 ns |
| Case/Package | SOT-223 |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 4 |
| Number of Terminals | 4 |
| Weight | 250.2 mg |
| Height | 1.8 mm |
| Length | 6.7 mm |
| Width | 3.7 mm |
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