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FGB7N60UNDF
- Part No
- FGB7N60UNDF
- Manufacturer
- onsemi
- Description
- Trans IGBT Chip N=-CH 600V 14A 83000mW 3-Pin(2+Tab) D2PAK T/R
- Datasheet
- FGB7N60UNDF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 600 V |
| Collector Emitter Saturation Voltage | 1.9 V |
| Collector Emitter Voltage (VCEO) | 600 V |
| Continuous Collector Current | 14 A |
| Element Configuration | Single |
| Fall Time | 89 ns |
| Max Collector Current | 14 A |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 83 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 83 W |
| Reverse Recovery Time | 32.3 ns |
| Turn-Off Delay Time | 32.3 ns |
| Turn-On Delay Time | 5.9 ns |
| Case/Package | D2PAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 1.31247 g |
| Height | 5.08 mm |
| Length | 10.67 mm |
| Width | 9.65 mm |
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