Generic image
FGD3N60UNDF
- Part No
- FGD3N60UNDF
- Manufacturer
- onsemi
- Description
- Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
- Datasheet
- FGD3N60UNDF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 600 V |
| Collector Emitter Saturation Voltage | 2.4 V |
| Collector Emitter Voltage (VCEO) | 600 V |
| Element Configuration | Single |
| Max Breakdown Voltage | 600 V |
| Max Collector Current | 6 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 60 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 60 W |
| Reverse Recovery Time | 21 ns |
| Case/Package | TO-252-3 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 260.37 mg |
| Height | 2.3 mm |
| Length | 6.6 mm |
| Width | 6.1 mm |
added to cart
View cart
Related Products