Generic image
FGY40T120SMD
- Part No
- FGY40T120SMD
- Manufacturer
- onsemi
- Description
- Trans IGBT Chip N=-CH 1200V 80A 882000mW 3-Pin(3+Tab) Power TO-247 T/R
- Datasheet
- FGY40T120SMD
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 1.2 kV |
| Collector Emitter Saturation Voltage | 2.4 V |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Continuous Collector Current | 80 A |
| Max Collector Current | 80 A |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 882 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 882 W |
| Reverse Recovery Time | 65 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 475 ns |
| Turn-On Delay Time | 40 ns |
| Case/Package | TO-247-3 |
| Mount | Through Hole |
| Number of Terminals | 3 |
| Weight | 7.629 g |
| Height | 24.75 mm |
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