FGH40N60UFDTU Generic image

FGH40N60UFDTU

Part No
FGH40N60UFDTU
Manufacturer
onsemi
Description
FAIRCHILD SEMICONDUCTOR FGH40N60UFDTU IGBT Single Transistor, General Purpose, 80 A, 600 V, 290 W, 600 V, TO-247AB, 3 Pins
Datasheet
FGH40N60UFDTU
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Emitter Breakdown Voltage 600 V
    Collector Emitter Saturation Voltage 1.8 V
    Collector Emitter Voltage (VCEO) 600 V
    Continuous Collector Current 80 A
    Element Configuration Single
    Fall Time 100 ns
    Max Collector Current 80 A
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 290 W
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 290 W
    Reverse Recovery Time 45 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 112 ns
    Turn-On Delay Time 24 ns
    Case/Package TO-247-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.39 g
    Height 24.75 mm
    Length 15.6 mm
    Width 4.7 mm
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