Generic image
FGA40T65SHDF
- Part No
- FGA40T65SHDF
- Manufacturer
- onsemi
- Description
- Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-3PN Rail
- Datasheet
- FGA40T65SHDF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 650 V |
| Collector Emitter Saturation Voltage | 1.81 V |
| Collector Emitter Voltage (VCEO) | 650 V |
| Continuous Collector Current | 80 A |
| Max Collector Current | 80 A |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 268 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 268 W |
| Reverse Recovery Time | 101 ns |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 64 ns |
| Turn-On Delay Time | 18 ns |
| Mount | Through Hole |
| Number of Terminals | 3 |
| Weight | 6.401 g |
| Height | 23.8 mm |
added to cart
View cart
Related Products