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FGL60N100BNTD
- Part No
- FGL60N100BNTD
- Manufacturer
- onsemi
- Description
- IGBT 1000V 60A 180W TO264 / Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube
- Datasheet
- FGL60N100BNTD
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 1 kV |
| Collector Emitter Saturation Voltage | 2.5 V |
| Collector Emitter Voltage (VCEO) | 1 kV |
| Continuous Collector Current | 60 A |
| Current Rating | 60 A |
| Element Configuration | Single |
| Fall Time | 250 ns |
| Max Breakdown Voltage | 1 kV |
| Max Collector Current | 60 A |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 180 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 180 W |
| Reverse Recovery Time | 1.2 µs |
| Rise Time | 320 ns |
| Schedule B | 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 630 ns |
| Turn-On Delay Time | 140 ns |
| Voltage Rating (DC) | 1 kV |
| Case/Package | TO-264 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 6.756 g |
| Height | 29 mm |
| Length | 20 mm |
| Width | 5 mm |
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