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FGD5T120SH
- Part No
- FGD5T120SH
- Manufacturer
- onsemi
- Description
- Trans IGBT Chip N=-CH 1200V 10A 69000mW T/R
- Datasheet
- FGD5T120SH
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 1.2 kV |
| Collector Emitter Saturation Voltage | 3.6 V |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Continuous Collector Current | 10 A |
| Max Breakdown Voltage | 1.2 kV |
| Max Collector Current | 10 A |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 69 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 69 W |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 24.8 ns |
| Turn-On Delay Time | 4.8 ns |
| Case/Package | TO-252 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 260.37 mg |
| Height | 2.517 mm |
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