FGAF40N60SMD Generic image

FGAF40N60SMD

Part No
FGAF40N60SMD
Manufacturer
onsemi
Description
Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Tube
Datasheet
FGAF40N60SMD
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Collector Emitter Breakdown Voltage 600 V
    Collector Emitter Saturation Voltage 1.9 V
    Collector Emitter Voltage (VCEO) 600 V
    Continuous Collector Current 80 A
    Element Configuration Single
    Fall Time 17 ns
    Max Collector Current 80 A
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 115 W
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 115 W
    Reverse Recovery Time 36 ns
    Schedule B 8541290080
    Turn-Off Delay Time 92 ns
    Turn-On Delay Time 12 ns
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.962 g
    Height 29.9 mm
    Length 15.7 mm
    Width 3.2 mm
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