FDS86252 Generic image

FDS86252

Part No
FDS86252
Manufacturer
onsemi
Description
FDS86252 Series 150 V 4.5 A 55 mOhm N-Channel PowerTrench MOSFET - SOIC-8
Datasheet
FDS86252
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.5 A
    Drain to Source Breakdown Voltage 150 V
    Drain to Source Resistance 55 mΩ
    Drain to Source Voltage (Vdss) 150 V
    Element Configuration Single
    Fall Time 2.9 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 955 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 5 W
    Min Breakdown Voltage 150 V
    Min Operating Temperature -55 °C
    Nominal Vgs 3.4 V
    Number of Channels 1
    Number of Elements 1
    Packaging Tape and Reel
    Power Dissipation 2.5 W
    Rds On Max 55 mΩ
    Rise Time 1.6 ns
    Threshold Voltage 3.4 V
    Turn-Off Delay Time 14 ns
    Turn-On Delay Time 9.2 ns
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 130 mg
    Height 1.75 mm
    Length 4 mm
    Width 5 mm
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