FDS9953A Generic image

FDS9953A

Part No
FDS9953A
Manufacturer
onsemi
Description
Transistor MOSFET Array Dual P-CH 30V 2.9A 8-Pin SOIC T/R
Datasheet
FDS9953A
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.9 A
    Current Rating -2.9 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 130 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Element Configuration Dual
    Fall Time 2 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 185 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.8 V
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 2 W
    Rds On Max 130 mΩ
    Resistance 130 MΩ
    Rise Time 13 ns
    Schedule B 8541290080
    Threshold Voltage -1.8 V
    Turn-Off Delay Time 11 ns
    Turn-On Delay Time 4.5 ns
    Voltage Rating (DC) -30 V
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 230.4 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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