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FDZ1323NZ

Part No: FDZ1323NZ
Manufacturer: onsemi
Description: the art“low pitch” WLCSP packaging process, the FDZ1323NZ minimizes both PCB space and rS1S2(on). This advanced WLCSP MOSFET embodies a breakthrough in
Datasheet: FDZ1323NZ
Test Report: Available
Samples: Available

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Specification	Value
Continuous Drain Current (ID)	10 A
Drain to Source Breakdown Voltage	20 V
Drain to Source Resistance	18 mΩ
Drain to Source Voltage (Vdss)	20 V
Element Configuration	Single
Fall Time	13 ns
Gate to Source Voltage (Vgs)	12 V
Input Capacitance	2.055 nF
Max Junction Temperature (Tj)	150 °C
Max Operating Temperature	150 °C
Max Power Dissipation	2 W
Min Breakdown Voltage	20 V
Min Operating Temperature	-55 °C
Number of Channels	2
Number of Elements	2
Packaging	Tape & Reel
Power Dissipation	500 mW
Rds On Max	13 mΩ
Rise Time	13 ns
Turn-Off Delay Time	34 ns
Turn-On Delay Time	12 ns
Mount	Surface Mount
Number of Pins	6
Number of Terminals	6
Weight	50 mg
Height	350 µm
Length	2.3 mm
Width	1.3 mm