FDS8928A Generic image

FDS8928A

Part No
FDS8928A
Manufacturer
onsemi
Description
Dual N & P-Channel 30 V 30 mOhm Power Field Effect Transistor-SOIC-8
Datasheet
FDS8928A
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 5.5 A
    Current Rating 5.5 A
    Drain to Source Resistance 30 mΩ
    Fall Time 90 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 900 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 670 mV
    Number of Channels 2
    Number of Elements 2
    Packaging Cut Tape
    Power Dissipation 2 W
    Rds On Max 30 mΩ
    Resistance 30 MΩ
    Rise Time 23 ns
    Schedule B 8541290080
    Threshold Voltage 670 mV
    Turn-Off Delay Time 260 ns
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 230.4 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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