FDS8880 Generic image

FDS8880

Part No
FDS8880
Manufacturer
onsemi
Description
Transistor, Single, N-channel, PowerTrench MOSFET, 30V, 11.6A, SOIC8
Datasheet
FDS8880
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11.6 A
    Current Rating 11.6 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 10 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Dual Supply Voltage 30 V
    Element Configuration Single
    Fall Time 15 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.235 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 2.5 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.5 W
    Rds On Max 10 mΩ
    Resistance 10 MΩ
    Rise Time 27 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 2.5 V
    Turn-Off Delay Time 38 ns
    Turn-On Delay Time 7 ns
    Voltage Rating (DC) 30 V
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 130 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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