FDT3N40TF Generic image

FDT3N40TF

Part No
FDT3N40TF
Manufacturer
onsemi
Description
FDT3N40TF N-Channel MOSFET, 2 A, 400 V UniFET, 3 + Tab-Pin SOT-223 ON Semiconductor
Datasheet
FDT3N40TF
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2 A
    Drain to Source Breakdown Voltage 400 V
    Drain to Source Resistance 3.4 Ω
    Drain to Source Voltage (Vdss) 400 V
    Element Configuration Single
    Fall Time 25 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 225 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 400 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2 W
    Rds On Max 3.4 Ω
    Rise Time 30 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 5 V
    Turn-Off Delay Time 10 ns
    Turn-On Delay Time 10 ns
    Case/Package SOT-223-4
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 4
    Weight 188 mg
    Height 1.8 mm
    Length 6.5 mm
    Width 3.5 mm
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