FCP16N60N Generic image

FCP16N60N

Part No
FCP16N60N
Manufacturer
onsemi
Description
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 16 A, 199 mΩ, TO-220
Datasheet
FCP16N60N
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 16 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 199 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 20.2 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 2.17 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 134.4 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Nominal Vgs 2 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 134.4 W
    Rds On Max 199 mΩ
    Resistance 199 mΩ
    Rise Time 15.5 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2 V
    Turn-Off Delay Time 60.3 ns
    Turn-On Delay Time 15.8 ns
    Case/Package TO-220
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 20.4 mm
    Length 10.67 mm
    Width 4.83 mm
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