FCP104N60F Generic image

FCP104N60F

Part No
FCP104N60F
Manufacturer
onsemi
Description
Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-220
Datasheet
FCP104N60F
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 37 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 104 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 21.4 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 6.13 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 357 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 357 W
    Rds On Max 104 mΩ
    Rise Time 50 ns
    Schedule B 8541290080
    Turn-Off Delay Time 102 ns
    Turn-On Delay Time 34 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 19.85 mm
    Length 10.36 mm
    Width 4.672 mm
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