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FCP190N65F
- Part No
- FCP190N65F
- Manufacturer
- onsemi
- Description
- N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650V, 20.6A, 190mΩ, TO-220
- Datasheet
- FCP190N65F
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 20.6 A |
| Drain to Source Breakdown Voltage | 650 V |
| Drain to Source Resistance | 190 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Element Configuration | Single |
| Fall Time | 4.2 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 3.225 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 208 W |
| Min Breakdown Voltage | 650 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 208 W |
| Rds On Max | 190 mΩ |
| Rise Time | 11 ns |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 62 ns |
| Turn-On Delay Time | 25 ns |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 1.8 g |
| Height | 20.4 mm |
| Length | 10.67 mm |
| Width | 4.7 mm |
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