FCPF11N60T Generic image

FCPF11N60T

Part No
FCPF11N60T
Manufacturer
onsemi
Description
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F
Datasheet
FCPF11N60T
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11 A
    Current Rating 11 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 380 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 56 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.49 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 36 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 36 W
    Rds On Max 380 mΩ
    Rise Time 98 ns
    Turn-Off Delay Time 119 ns
    Turn-On Delay Time 34 ns
    Voltage Rating (DC) 600 V
    Case/Package TO-220
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 2.27 g
    Height 19.3 mm
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