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FCPF190N60
- Part No
- FCPF190N60
- Manufacturer
- onsemi
- Description
- N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220F
- Datasheet
- FCPF190N60
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 20.2 A |
| Drain to Source Breakdown Voltage | 650 V |
| Drain to Source Resistance | 199 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Fall Time | 5 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 2.95 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 39 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 39 W |
| Rds On Max | 199 mΩ |
| Rise Time | 10 ns |
| Threshold Voltage | 2.5 V |
| Turn-Off Delay Time | 64 ns |
| Turn-On Delay Time | 20 ns |
| Case/Package | TO-220-3 |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 2.27 g |
| Height | 16.07 mm |
| Length | 10.36 mm |
| Width | 4.9 mm |
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