FDC6312P Generic image

FDC6312P

Part No
FDC6312P
Manufacturer
onsemi
Description
Dual P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.3A, 115mΩ
Datasheet
FDC6312P
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.3 A
    Current Rating -2.3 A
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 115 mΩ
    Drain to Source Voltage (Vdss) -20 V
    Dual Supply Voltage -20 V
    Element Configuration Dual
    Fall Time 13 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 467 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 960 mW
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Nominal Vgs -900 mV
    Number of Channels 2
    Number of Elements 2
    Packaging Cut Tape
    Power Dissipation 700 mW
    Rds On Max 115 mΩ
    Resistance 115 MΩ
    Rise Time 13 ns
    Schedule B 8541210080
    Termination SMD/SMT
    Threshold Voltage -900 mV
    Turn-Off Delay Time 18 ns
    Turn-On Delay Time 8 ns
    Voltage Rating (DC) -20 V
    Case/Package SOT-23-6
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 36 mg
    Height 1.1 mm
    Length 3 mm
    Width 1.7 mm
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