FDB8832 Generic image

FDB8832

Part No
FDB8832
Manufacturer
onsemi
Description
FDB8832 Series 30V 80 A 2.1 mOhm N-Ch. Logic Level PowerTrench Mosfet - TO-263AB
Datasheet
FDB8832
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 34 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 2.2 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Dual Supply Voltage 30 V
    Element Configuration Single
    Fall Time 38 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 11.4 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 300 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.6 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 300 W
    Rds On Max 1.9 mΩ
    Reverse Recovery Time 59 ns
    Rise Time 73 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 1.6 V
    Turn-Off Delay Time 54 ns
    Turn-On Delay Time 24 ns
    Case/Package TO-263
    Mount Surface Mount
    Number of Pins 2
    Number of Terminals 2
    Weight 1.31247 g
    Height 5.08 mm
    Length 10.67 mm
    Width 11.33 mm
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