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FCP650N80Z
- Part No
- FCP650N80Z
- Manufacturer
- onsemi
- Description
- N-Channel Power MOSFET, SUPERFET® II, 800 V, 10 A, 650 mΩ, TO-220
- Datasheet
- FCP650N80Z
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 10 A |
| Drain to Source Resistance | 650 mΩ |
| Drain to Source Voltage (Vdss) | 800 V |
| Element Configuration | Single |
| Input Capacitance | 1.565 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 162 W |
| Min Breakdown Voltage | 800 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Rds On Max | 650 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 4.5 V |
| Case/Package | TO-220 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 1.8 g |
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