FDC602P Generic image

FDC602P

Part No
FDC602P
Manufacturer
onsemi
Description
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ
Datasheet
FDC602P
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 5.5 A
    Current 55 A
    Current Rating -5.5 A
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 33 mΩ
    Drain to Source Voltage (Vdss) -20 V
    Dual Supply Voltage -20 V
    Element Configuration Single
    Fall Time 11 ns
    Gate to Source Voltage (Vgs) 12 V
    Input Capacitance 1.456 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.6 W
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Nominal Vgs -900 mV
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 800 mW
    Rds On Max 35 mΩ
    Resistance 35 MΩ
    Rise Time 11 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage -900 mV
    Turn-Off Delay Time 57 ns
    Turn-On Delay Time 15 ns
    Voltage 20 V
    Voltage Rating (DC) -20 V
    Case/Package SOT-23-6
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Height 1.1 mm
    Length 3 mm
    Width 1.7 mm
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