FDC5614P Generic image

FDC5614P

Part No
FDC5614P
Manufacturer
onsemi
Description
P-Channel PowerTrench® MOSFET, Logic Level, 60V -3A, 105mΩ
Datasheet
FDC5614P
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3 A
    Current 2 A
    Current Rating -3 A
    Drain to Source Breakdown Voltage -60 V
    Drain to Source Resistance 105 mΩ
    Drain to Source Voltage (Vdss) -60 V
    Element Configuration Single
    Fall Time 10 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 759 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.6 W
    Manufacturer Package Identifier CASE 419AG−01
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Nominal Vgs -1.6 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 1.6 W
    Rds On Max 105 mΩ
    Resistance 105 MΩ
    Rise Time 10 ns
    Schedule B 8541290080
    Threshold Voltage -1.6 V
    Turn-Off Delay Time 19 ns
    Turn-On Delay Time 7 ns
    Voltage 60 V
    Voltage Rating (DC) -60 V
    Case/Package SOT-23-6
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Height 900 µm
    Length 3 mm
    Width 1.7 mm
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