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FCP190N60_GF102
- Part No
- FCP190N60_GF102
- Manufacturer
- onsemi
- Description
- N-channel Superfet® II Mosfet 600V, 20.2A, 199MΩ
- Datasheet
- FCP190N60_GF102
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 20.2 A |
| Drain to Source Resistance | 199 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Fall Time | 5 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 2.95 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 208 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 208 W |
| Rds On Max | 199 mΩ |
| Rise Time | 10 ns |
| Turn-Off Delay Time | 64 ns |
| Turn-On Delay Time | 20 ns |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 1.8 g |
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