FDA59N25 Generic image

FDA59N25

Part No
FDA59N25
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM, 250V, 59A, 49mΩ, TO-3P
Datasheet
FDA59N25
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 59 A
    Drain to Source Breakdown Voltage 250 V
    Drain to Source Resistance 49 mΩ
    Drain to Source Voltage (Vdss) 250 V
    Element Configuration Single
    Fall Time 170 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 4.02 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 392 W
    Min Breakdown Voltage 250 V
    Min Operating Temperature -55 °C
    Nominal Vgs 5 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 392 W
    Rds On Max 49 mΩ
    Rise Time 480 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
    Threshold Voltage 5 V
    Turn-Off Delay Time 90 ns
    Turn-On Delay Time 70 ns
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.401 g
    Height 22.6 mm
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