FDA24N50 Generic image

FDA24N50

Part No
FDA24N50
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM, 500 V, 24 A, 190 mΩ, TO-3P
Datasheet
FDA24N50
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 24 A
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 190 mΩ
    Drain to Source Voltage (Vdss) 500 V
    Element Configuration Single
    Fall Time 86 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 4.15 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 270 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 270 W
    Rds On Max 190 mΩ
    Resistance 190 MΩ
    Rise Time 108 ns
    Threshold Voltage 5 V
    Turn-Off Delay Time 164 ns
    Turn-On Delay Time 47 ns
    Mount Through Hole
    Number of Terminals 3
    Weight 6.401 g
    Height 20.1 mm
    Length 15.8 mm
    Width 5 mm
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