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FDB86102LZ
- Part No
- FDB86102LZ
- Manufacturer
- onsemi
- Description
- Trans MOSFET N-CH 100V 8.3A 3-Pin(2+Tab) D2PAK T/R
- Datasheet
- FDB86102LZ
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 8.3 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 24 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 2.3 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.275 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 3.1 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 1.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 2 W |
| Rds On Max | 24 mΩ |
| Rise Time | 2.1 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 1.5 V |
| Turn-Off Delay Time | 18.2 ns |
| Turn-On Delay Time | 6.6 ns |
| Case/Package | TO-263-3 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 1.31247 g |
| Height | 5.08 mm |
| Length | 10.67 mm |
| Width | 11.33 mm |
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