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FCP110N65F
- Part No
- FCP110N65F
- Manufacturer
- onsemi
- Description
- N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650V, 35A, 110mΩ, TO-220
- Datasheet
- FCP110N65F
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 35 A |
| Drain to Source Breakdown Voltage | 650 V |
| Drain to Source Resistance | 110 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Element Configuration | Single |
| Fall Time | 5.7 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 4.895 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 357 W |
| Min Breakdown Voltage | 650 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Rds On Max | 110 mΩ |
| Rise Time | 21 ns |
| Turn-Off Delay Time | 89 ns |
| Turn-On Delay Time | 31 ns |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 1.8 g |
| Height | 16.3 mm |
| Length | 10.67 mm |
| Width | 4.7 mm |
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