FCPF260N65FL1 Generic image

FCPF260N65FL1

Part No
FCPF260N65FL1
Manufacturer
onsemi
Description
N-Channel Power MOSFET, SuperFET® II, FRFET®, 650 V, 15 A, 260 mΩ, TO-220F
Datasheet
FCPF260N65FL1
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 15 A
    Drain to Source Breakdown Voltage 650 V
    Drain to Source Resistance 260 mΩ
    Drain to Source Voltage (Vdss) 650 V
    Element Configuration Single
    Fall Time 5.8 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.34 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 36 W
    Min Breakdown Voltage 650 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 36 W
    Rds On Max 260 mΩ
    Resistance 260 mΩ
    Rise Time 10.5 ns
    Turn-Off Delay Time 54 ns
    Turn-On Delay Time 21.7 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Terminals 3
    Weight 2.27 g
    Height 19 mm
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