FDA70N20 Generic image

FDA70N20

Part No
FDA70N20
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM, 200V, 70A, 35mΩ, TO-3P
Datasheet
FDA70N20
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 70 A
    Current Rating 70 A
    Drain to Source Breakdown Voltage 200 V
    Drain to Source Resistance 35 mΩ
    Drain to Source Voltage (Vdss) 200 V
    Element Configuration Single
    Fall Time 39 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 3.97 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 417 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Nominal Vgs 5 V
    Number of Elements 1
    Power Dissipation 417 W
    Rds On Max 35 mΩ
    Resistance 35 MΩ
    Rise Time 235 ns
    Schedule B 8541290080
    Threshold Voltage 5 V
    Turn-Off Delay Time 65 ns
    Turn-On Delay Time 71 ns
    Voltage Rating (DC) 200 V
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.401 g
    Height 20.1 mm
    Length 15.8 mm
    Width 5 mm
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