FDA28N50F Generic image

FDA28N50F

Part No
FDA28N50F
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 28 A, 175 mΩ, TO-3P
Datasheet
FDA28N50F
Test Report
Available
Samples
Available

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    Availability:
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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 28 A
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 175 mΩ
    Drain to Source Voltage (Vdss) 500 V
    Element Configuration Single
    Fall Time 101 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 5.387 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 310 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 310 W
    Rds On Max 175 mΩ
    Rise Time 137 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 192 ns
    Turn-On Delay Time 67 ns
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.401 g
    Height 20.1 mm
    Length 15.8 mm
    Width 5 mm
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