FCPF9N60NTYDTU Generic image

FCPF9N60NTYDTU

Part No
FCPF9N60NTYDTU
Manufacturer
onsemi
Description
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, TO-220F
Datasheet
FCPF9N60NTYDTU
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 9 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 385 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.24 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 29.8 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 29.8 W
    Rds On Max 385 mΩ
    Turn-Off Delay Time 36.9 ns
    Turn-On Delay Time 12.7 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Terminals 3
    Weight 2.565 g
    Height 22.52 mm
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