FDG330P Generic image

FDG330P

Part No
FDG330P
Manufacturer
onsemi
Description
P-Channel 1.8V Specified PowerTrench® MOSFET -12 V, -2 A, 110 mΩ
Datasheet
FDG330P
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2 A
    Current Rating -2 A
    Drain to Source Breakdown Voltage -12 V
    Drain to Source Resistance 110 mΩ
    Drain to Source Voltage (Vdss) -12 V
    Element Configuration Single
    Fall Time 11 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 477 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 480 mW
    Min Breakdown Voltage 12 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 750 mW
    Rds On Max 110 mΩ
    Rise Time 11 ns
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Threshold Voltage -700 mV
    Turn-Off Delay Time 12 ns
    Turn-On Delay Time 10 ns
    Voltage Rating (DC) -12 V
    Case/Package SC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 28 mg
    Height 1.1 mm
    Length 2 mm
    Width 1.25 mm
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