FDG315N Generic image

FDG315N

Part No
FDG315N
Manufacturer
onsemi
Description
Logic Level PowerTrench® MOSFET, N-Channel, 30 V, 2 A, 120 mΩ
Datasheet
FDG315N
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2 A
    Current Rating 2 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 120 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Dual Supply Voltage 30 V
    Element Configuration Single
    Fall Time 11 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 220 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 750 mW
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.8 V
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 750 mW
    Rds On Max 120 mΩ
    Resistance 120 MΩ
    Rise Time 11 ns
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Termination SMD/SMT
    Threshold Voltage 1.8 V
    Turn-Off Delay Time 7 ns
    Turn-On Delay Time 3 ns
    Voltage Rating (DC) 30 V
    Case/Package SC
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 28 mg
    Height 1 mm
    Length 2 mm
    Width 1.25 mm
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