FDA50N50 Generic image

FDA50N50

Part No
FDA50N50
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM, 500V, 48A, 105mΩ, TO-3P
Datasheet
FDA50N50
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 48 A
    Current Rating 48 A
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 105 mΩ
    Drain to Source Voltage (Vdss) 500 V
    Element Configuration Single
    Fall Time 230 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 6.46 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 625 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 625 W
    Rds On Max 105 mΩ
    Rise Time 360 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 5 V
    Turn-Off Delay Time 225 ns
    Turn-On Delay Time 105 ns
    Voltage Rating (DC) 500 V
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.401 g
    Height 23.8 mm
    Length 15.6 mm
    Width 4.8 mm
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