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FDD3N50NZTM
- Part No
- FDD3N50NZTM
- Manufacturer
- onsemi
- Description
- N-Channel Power MOSFET, UniFETTM II, 500 V, 3 A, 2.5 Ω, DPAK
- Datasheet
- FDD3N50NZTM
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 2.5 A |
| Drain to Source Resistance | 2.5 Ω |
| Drain to Source Voltage (Vdss) | 500 V |
| Element Configuration | Single |
| Fall Time | 17 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 280 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 40 W |
| Min Breakdown Voltage | 500 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 40 W |
| Rds On Max | 2.5 Ω |
| Rise Time | 15 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 26 ns |
| Turn-On Delay Time | 10 ns |
| Case/Package | DPAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 260.37 mg |
| Height | 2.39 mm |
| Length | 6.73 mm |
| Width | 6.22 mm |
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