FDD3860 Generic image

FDD3860

Part No
FDD3860
Manufacturer
onsemi
Description
In a Pack of 5, FDD3860 N-Channel MOSFET, 29 A, 100 V PowerTrench, 3-Pin DPAK ON Semiconductor
Datasheet
FDD3860
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6.2 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 36 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 7 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.74 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 69 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 3.75 W
    Rds On Max 36 mΩ
    Resistance 36 MΩ
    Rise Time 10 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 3.8 V
    Turn-Off Delay Time 24 ns
    Turn-On Delay Time 16 ns
    Case/Package DPAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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